Semiconductor · Melting Point
Melting Point of Silicon Carbide (4H)
The melting point of Silicon Carbide (4H) is approximately 2830 °C. Upper thermal limit for solid-state operation and manufacturing.
Melting Point of Silicon Carbide (4H)
2830 °C
Ranked #6 of 53 materials by melting point
Compared to nearby materials
| Diamond | 3550 °C |
| Tungsten | 3422 °C |
| Tungsten Carbide | 2870 °C |
| Silicon Carbide (4H) | 2830 °C |
| Silicon Carbide | 2730 °C |
| Zirconia (YSZ) | 2715 °C |
| Molybdenum | 2623 °C |
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