Semiconductor
Silicon Carbide (4H) — Properties
Representative simulation properties for Silicon Carbide (4H). Click any property for a detailed comparison across materials.
| Density | 3210 kg/m³ |
| Young's Modulus | 450 GPa |
| Thermal Conductivity | 370 W/(m·K) |
| Specific Heat | 690 J/(kg·K) |
| Melting Point | 2830 °C |
| Thermal Expansion | 4.2 ×10⁻⁶/K |
| Poisson's Ratio | 0.21 |
Using Silicon Carbide (4H) in a simulation
Assign these properties to a material node in PolySim to run structural, thermal, or multi-physics analyses with Silicon Carbide (4H). The AI Copilot can suggest which properties matter most for your specific study.
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