Semiconductor · Specific Heat
Specific Heat of Silicon Carbide (4H)
The specific heat of Silicon Carbide (4H) is approximately 690 J/(kg·K). Heat needed to raise temperature — governs transient thermal response.
Specific Heat of Silicon Carbide (4H)
690 J/(kg·K)
Ranked #33 of 53 materials by specific heat
Compared to nearby materials
| Graphite | 710 J/(kg·K) |
| Silicon Nitride | 700 J/(kg·K) |
| Silicon | 700 J/(kg·K) |
| Silicon Carbide (4H) | 690 J/(kg·K) |
| Titanium Ti-6Al-4V | 526 J/(kg·K) |
| Diamond | 509 J/(kg·K) |
| Stainless Steel 304 | 500 J/(kg·K) |
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