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Semiconductor · Young's Modulus

Young's Modulus of Silicon Carbide (4H)

The young's modulus of Silicon Carbide (4H) is approximately 450 GPa. Stiffness under tension — the key input for structural FEA.

Young's Modulus of Silicon Carbide (4H)

450 GPa

Ranked #3 of 53 materials by young's modulus

Compared to nearby materials

Diamond	1050 GPa
Tungsten Carbide	600 GPa
Silicon Carbide (4H)	450 GPa
Tungsten	411 GPa
Silicon Carbide	410 GPa
Alumina (Al₂O₃)	370 GPa

← All properties of Silicon Carbide (4H)

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Property values and figures shown are typical/representative ranges compiled for reference and may vary by source, grade, temperature, and processing. Verify against primary sources before use in design.