Semiconductor · Thermal Expansion
Thermal Expansion of Silicon Carbide (4H)
The thermal expansion of Silicon Carbide (4H) is approximately 4.2 ×10⁻⁶/K. How much it grows with temperature — critical for thermal-stress.
Thermal Expansion of Silicon Carbide (4H)
4.2 ×10⁻⁶/K
Ranked #44 of 53 materials by thermal expansion
Compared to nearby materials
| Fiberglass (GFRP) | 5 ×10⁻⁶/K |
| Molybdenum | 4.8 ×10⁻⁶/K |
| Tungsten | 4.5 ×10⁻⁶/K |
| Silicon Carbide (4H) | 4.2 ×10⁻⁶/K |
| Silicon Carbide | 4 ×10⁻⁶/K |
| Graphite | 4 ×10⁻⁶/K |
| Silicon Nitride | 3.3 ×10⁻⁶/K |
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